Zhang Weican Chunyu Baozhu Chen Jingeng. COMPARING THE ELECTROCHEMICAL AND PHO-TOELECTRO-CHEMICAL PROPERTIES OF A - Fe2O3 THIN FILMS WITH a-Fe2O3 THIN FILMS[J]. Journal of University of Jinan(Social Science Edition), 1995,(4):80-83.
Zhang Weican Chunyu Baozhu Chen Jingeng. COMPARING THE ELECTROCHEMICAL AND PHO-TOELECTRO-CHEMICAL PROPERTIES OF A - Fe2O3 THIN FILMS WITH a-Fe2O3 THIN FILMS[J]. Journal of University of Jinan(Social Science Edition), 1995,(4):80-83.DOI:
晶态和非晶态氧化铁薄膜电极电化学和光电化学特性的比较
摘要
本文比较了利用CVD技术生长的a—Fe
2
O
3
和α—Fe
2
O
3
薄膜电极的电化学和光电化学特性.实验表明:在1MKOH电解液中
α—Fe
2
O
3
薄膜电极具有较大的阳极电流
较稳定的光电位和较大的光电流.二者都显示出n型半导体特性.a—Fe
2
O
3
的导带边缘能级较高.光照时
光生载流子的效率更高
但却易于复合.
Abstract
The electrochemical and photoelectrochemical properties of a - Fe2O3 thin films are compared with that of a-Fe2o3 thin films. The experiments show that a - Fe2O3 thin film electrodes have a greater anode current
more stable photovoltage and greater pho-tocurrent in 1MKOH resolution. Both of a - Fe2O3 and a - Fe2O3 are n - type semiconductors. The energy level of edge of conduction bands of a - Fe2O3 is higher than that of a -Fe2O3. when illuminated with light
a -Fe2O3 creates more electron - hole pairs
but elec-tronhole paris will be recombinated faster than a-Fe2O3.